SRT04N016L N-Channel Power MOSFET The SRT04N016L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on-resistance, low gate charge, and fast switching time, making it especially suitable for applications that require superior power density and synchronous rectification. The breakdown voltage is 40V and it has a high rugged avalanche characteristic. The SRT04N016L is available in the PDFN 5*6 package.

Features:

Ultra-Low RDS(ON)_TYP = 1.15mΩ@VGS = 10V

Ultra-Low Gate Charge, Qg=85nC typ

Fast switching capability

Robust design with better EAS performance

EMI Improved

Application:

Server / Telecom, High Power Supply, E-Tools, BMS.