NCE65T130F N-Channel Power MOSFET NCE65T130F devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. Drain-Source Voltage 650V, using TO-220F package.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is more guaranteed; welcome to buy!

Features:

New technology for high voltage device

Low on-resistance and low conduction losses

Small package

Ultra-low gate charge causes lower driving requirements

Application:

Power factor correction (PFC)

Switched mode power supplies (SMPS)

Uninterruptible Power Supply (UPS)