S29GL512T10TFI010

S29GL512T10TFI010 is a Mirror Bit Eclipse flash memory product manufactured with 45nm process technology. These devices provide fast page access times as fast as 15 ns, and corresponding random access times as fast as 100 ns. They have a write buffer that allows up to 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.

1. Single power supply (VCC) for read/program/erase (2.7 V to 3.6 V)

2. Suspend and resume commands for programming and erasing operations

3. Status register, data polling and ready/busy pin methods to determine device status

4. Typical data retention for 20 years