Vs3510AP P-Channel Advanced Power MOSFET The VS3510AP transistor is a P-channel MOS FET with -5V logic level control. Low on-resistance RDS(on) @ VGS is -4.5V with enhanced mode and fast switching capability. Adopt PDFN 5*6 package.

Specification:

Drain-Source breakdown voltage: -30V

Diode continuous forward current: -45A

Continuous drain current @VGS=-10V (TC=25°C): -45A

Pulse drain current tested: -180A

Avalanche energy, single pulsed: 56mJ

Maximum power dissipation: 37W

Gate-Source voltage: ±20V

Storage and operating temperature range: -55 to 150°C