Compared to conventional transistors, the SIRA00DP-T1-GE3 power MOSFET developed by Vishay is capable of fast switching between data lines while amplifying the signal itself. Its maximum power consumption is 6250 mW. The MOSFET transistor has a minimum operating temperature of -55 °C and a maximum operating temperature of 150 °C. The device is fabricated using TrenchFET technology. The N-channel MOSFET transistor operates in enhancement mode.

Transistor Polarity: N Channel

Drain-source voltage Vds : 30V

Continuous drain current Id: 100A

On-resistance Rds(on): 830 microohms

Transistor case style: PowerPAK SO

Transistor Mount: Surface Mount

Rds(on) test voltage Vgs : 10V

Threshold voltage Vgs: 2.2V

Power consumption Pd : 104W

Maximum operating temperature: 150°C