AOD609 40V 12A MOSFET complementary enhancement mode field effect transistor using advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in H-bridges, inverters, and other applications.

Features:

N-channel

VDS (V) = 40V, ID = 12A (VGS=10V)

RDS(ON)< 30mW (VGS=10V)

RDS(ON)< 40mW (VGS=4.5V)

P-channel

VDS (V) = -40V, ID = -12A (VGS=-10V)

RDS(ON)< 45mW (VGS= -10V)

RDS(ON)< 66mW (VGS= -4.5V