M24LR64E-RMN6T/2

EEPROM, 64 Kbit, 8K x 8bit, Serial I2C (2-Wire), 400 kHz, SOIC, 8 Pins

M24LR64E-RMN6T/2 is a non-contact memory powered by the received carrier electromagnetic wave. M24LR64E-RMN6T/2 has an energy harvesting analog output, and a user-configurable digital output pin to switch during RF writing or RF busy mode.

Main features

1. Single supply voltage: 1.8 V to 5.5 V

2. Byte and page write (up to 4 bytes)

3. Random and sequential read mode

4. Self-timed programming cycle

5. Non-contact interface

6. ISO 15693 and ISO 18000-3 mode 1 compatible

7. 13.56 MHz ± 7 kHz carrier frequency