PMC4998X 40V N-Channel high current low internal resistance MOSFET

PMC4998X N-Channel enhancement mode power field-effect transistors are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient fast switching applications.

Features:

40V, 200A, RDS(ON) =1.4mΩ@VGS = 10V

Improved dv/dt capability

Fast switching

Green Device Available

Applications:

Powertools, load switch, LED applications, motor drive applications, etc.