SIRA00DP-T1-GE3 30V 100A (D-S) N-channel synchronous rectification MOSFET, commonly used in DC/DC, ORing, etc.

Product parameters:

Transistor Polarity: N-Channel

Number of channels: 1 channel

Vds - Destruction voltage between drain and source: 30V

Id - Continuous drain current: 100 A

Rds On - Resistance between drain and source: 830 uOhms

Vgs - Voltage between gate and source: -16V, +20V

Vgs th - threshold voltage between gate and source: 1.1V

Qg - Gate charge: 220nC

Working temperature: -55℃ to +150℃

Dp - Power Consumption: 104W

Applications:

• Synchronous rectification

• ORing

• High power density DC/DC

• VRM and embedded DC/DC