TC58BVG1S3HTAI0 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND electrically erasable programmable read-only memory (NAND EEPROM), organized as (2048 + 64) bytes × 64 pages × 2048 blocks, located on Whatsminer control board CB2 - on V8/V10. It utilizes I/O pins for address and data input/output and command input. Erase and program operations are performed automatically, making the device ideal for applications such as solid-state file storage, audio recording, still camera image file storage, and other systems requiring high-density non-volatile memory data storage.

The device has a 2112-byte static register that allows program and read data to be transferred between the register and the memory cell array in 2112-byte increments. Erase operations are performed in units of a single block (128 KB + 4 KB: 2112 bytes × 64 pages).

Product features:

• Organization

Memory cell array: 2112 × 128K × 8

Register: 2112 × 8

Page size: 2112 bytes

Block size: (128K + 4K) bytes

• Modes

Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy

Multi-Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

• Mode control

Serial input/output

Command Control

• Number of valid blocks

Min 2008 blocks

Max 2048 blocks

• Power supply

VCC = 2.7V to 3.6V

• Program/Erase time

Auto Page Program 330 µs/page typ.

Auto Block Erase 2.5 ms/block typ.

• Operating current

Read (25 ns cycle) 30 mA max.

Program (avg.) 30 mA max

Erase (avg.) 30 mA max

Standby 50 µA max

• 8-bit ECC for each 528Byte is implemented on the chip