The SRT045N012HS is a low-voltage power MOSFET in a PDFN5*6 package. Its low on-resistance, low gate charge, and fast switching times make it ideal for applications requiring excellent power density and synchronous rectification. Its breakdown voltage is 45V, making it highly robust avalanche characteristics.

Feature:

• Ultra-low RDS(ON)_TYP = 1.07mΩ @VGS = 10V

• Ultra-low gate charge, Qg=73nC (typ.)

• Fast switching capability

• Robust design with better EAS performance

• EMI improvement